Special Section on Resonant and Soft-Switching Techniques With Wide Bandgap Devices
نویسندگان
چکیده
منابع مشابه
Special Section on Fundamentals and Applications of Advanced Semiconductor Devices
This special section contains about 27 papers, which cover the fields of MOSFET technology, Emerging technology, III-V semiconductor technology, Nanoscale device technology Memory technology and Circuit technology. Recent years, innovations of electronic devices are strongly required for the various electronics fields such as information processing, communications, sensor electronics and power ...
متن کاملWide Bandgap Semiconductor Devices and MMICs: A DARPA Perspective
This paper reports on the recent successful completion of Phase I of DARPA’s Wide Bandgap Semiconductor Technology Initiative (WBGSTI). Phase I results are given for semi-insulating substrates and epitaxial growth, and a description and expectations for the upcoming Phases II and III are also provided. INTRODUCTION Wide bandgap devices and MMICs with high power density, high power added efficie...
متن کاملPhysical simulation, fabrication and characterization of Wide bandgap semiconductor devices
متن کامل
Special Section on Analog Circuit Techniques and Related Topics
The Institute of Electronics Information and Communication Engineers (IEICE) Transactions on Fundamentals announces a special section on "Analog Circuit Techniques and Related Topics" to be published in February 2016. Today's development of LSI technology has brought drastic improvement in wireline & wireless network communication, and its scope is still expanding including living, medical and ...
متن کاملAn Assessment of Wide Bandgap Semiconductors for Power Devices
An advantage for some wide bandgap materials, that is often overlooked, is that the thermal coefficient of expansion (CTE) is better matched to the ceramics in use for packaging technology. It is shown that the optimal choice for uni-polar devices is clearly GaN. It is further shown that the future optimal choice for bipolar devices is C (diamond) owing to the large bandgap, high thermal conduc...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Journal of Emerging and Selected Topics in Power Electronics
سال: 2019
ISSN: 2168-6777,2168-6785
DOI: 10.1109/jestpe.2019.2905112